P‐125: <i>WITHDRAWN:</i> Leaky Antiferroelectric Oxide TFT for Physical Reservoir Computing Devices Achieving BEOL Compatibility with Microwave Annealing

Neuromorphic devices with BEOL compatibility present promising potential for edge applications. In this study, we employed MWA to develop a leaky antiferroelectric HZO oxide TFT for BEOL applications. We formed leaky HZO with MWA at 350 °C, endowing it with short‐term memory roperties. Our leaky‐AFE oxide TFT effectively distinguished 16 reservoir states and achieved a high recognition accuracy of 91.44% in the MNIST handwritten digit dataset.