61‐2: Adhesion Mechanism of Ni‐Au and Cu layer in Electro‐less Nickel Immersion Gold Process for Chip on Glass MLED Backplane

Researching on mechanism of insufficient adhesion between Ni‐Au and Cu layer was using for improving product yield and reliability for chip on glass (COG) MLED backplane. The main factors are the Cu surface cleanliness before electro‐less nickel immersion gold process (ENIG) and the Cu/Ni interface voids influence during the ENIG process. Therefore, the adhesion problem can be solved completely by adjusting the backplane process.