P‐207: Development and Application of OPC Simulation in OLED Panel Design

With the developments of OLED technologies, numerous tendencies are usually proposed, such as low‐temperature polycrystalline silicon (LTPO), narrower bezel, higher PPI, higher brightness, and the usage of photo masks as few as possible. Meanwhile, the design of complex pixel circuits will become a bottleneck in the limited space for the achievement of high PPI and few mask simultaneously. However, it is also difficult to acquire the line width and space, which is close to the limit of the exposure machine as well. With these difficulties into consideration, in this paper, we provide a novel approach to solve the unique problems of reflection introduced by the stacking layers in backplate(BP) by improving the simulation accuracy of optical proximity correction(OPC), which does not exist in chip lithographic. With the help of this method, we can avoid deviation and yield loss by mask revision, which is due to in pixel circuits’ open and shorts. Based on these result, we believe that this OPC simulation method will provide a more efficient and accurate technical solution for high PPI products (i.g., WQHD) in future, as well as AR/VR products.

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Publication Details

Journal
SID Symposium Digest of Technical Papers
Published
2025-06-01
DOI
https://doi.org/10.1002/sdtp.18687
Primary Topic
Radioactive contamination and transfer
Type
article
Field-Weighted Citation Impact
0.00
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article

P‐207: Development and Application of OPC Simulation in OLED Panel Design

SID Symposium Digest of Technical Papers
Radioactive contamination and transfer
article

P‐207: Development and Application of OPC Simulation in OLED Panel Design

article en

Abstract

With the developments of OLED technologies, numerous tendencies are usually proposed, such as low‐temperature polycrystalline silicon (LTPO), narrower bezel, higher PPI, higher brightness, and the usage of photo masks as few as possible. Meanwhile, the design of complex pixel circuits will become a bottleneck in the limited space for the achievement of high PPI and few mask simultaneously. However, it is also difficult to acquire the line width and space, which is close to the limit of the exposure machine as well. With these difficulties into consideration, in this paper, we provide a novel approach to solve the unique problems of reflection introduced by the stacking layers in backplate(BP) by improving the simulation accuracy of optical proximity correction(OPC), which does not exist in chip lithographic. With the help of this method, we can avoid deviation and yield loss by mask revision, which is due to in pixel circuits’ open and shorts. Based on these result, we believe that this OPC simulation method will provide a more efficient and accurate technical solution for high PPI products (i.g., WQHD) in future, as well as AR/VR products.

SID Symposium Digest of Technical PapersVol. 56(1)
Advanced Technology & Materials (China) (CN), Tianma Microelectronics (China) (CN)
Industry, innovation and infrastructure
Openalex Percentile: Top 49%
Radioactive contamination and transfer
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