P‐207: Development and Application of OPC Simulation in OLED Panel Design
With the developments of OLED technologies, numerous tendencies are usually proposed, such as low‐temperature polycrystalline silicon (LTPO), narrower bezel, higher PPI, higher brightness, and the usage of photo masks as few as possible. Meanwhile, the design of complex pixel circuits will become a bottleneck in the limited space for the achievement of high PPI and few mask simultaneously. However, it is also difficult to acquire the line width and space, which is close to the limit of the exposure machine as well. With these difficulties into consideration, in this paper, we provide a novel approach to solve the unique problems of reflection introduced by the stacking layers in backplate(BP) by improving the simulation accuracy of optical proximity correction(OPC), which does not exist in chip lithographic. With the help of this method, we can avoid deviation and yield loss by mask revision, which is due to in pixel circuits’ open and shorts. Based on these result, we believe that this OPC simulation method will provide a more efficient and accurate technical solution for high PPI products (i.g., WQHD) in future, as well as AR/VR products.
Institutions
- Advanced Technology & Materials (China) (CN)
- Tianma Microelectronics (China) (CN)
Publication Details
- Journal
- SID Symposium Digest of Technical Papers
- Published
- 2025-06-01
- DOI
- https://doi.org/10.1002/sdtp.18687
- Primary Topic
- Radioactive contamination and transfer
- Type
- article
- Field-Weighted Citation Impact
- 0.00