P‐10: MicroLED Pixel Circuit with A Novel NMOS‐Oxide TFT Inverter for Reducing Falling Time and Enhancing Gray‐Level Expression

In this paper, we propose a new circuit that significantly reduces the falling time by adopting a novel oxide thin‐film transistor (TFT)‐based inverter for pulse width modulation (PWM). Compared to existing n‐channel metal‐oxide‐semiconductor (NMOS)‐only pixel circuits that rely solely on the SWEEP signal, the falling time is significantly reduced to 0. 125 μs, enabling the expression of up to 25 gray levels without wavelength shift or pulse distortion.