P‐80: Systematic Study on Scanning Direction of Excimer Laser Annealing in p‐Type Low‐Temperature Polycrystalline Silicon Thin‐Film Transistors

The bright points caused by off‐state leakage current constricted the reliability of LTPS TFT. The effect of ELA scanning direction on TFT properties was demonstrated. The trap state densities of grain boundary and poly‐Si/SiO##2 interface and barrier were calculated to clarify the mechanism of high off‐state leakage current.

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Publication Details

Journal
SID Symposium Digest of Technical Papers
Published
2025-06-01
DOI
https://doi.org/10.1002/sdtp.18543
Primary Topic
Theoretical and Computational Physics
Type
article
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article

P‐80: Systematic Study on Scanning Direction of Excimer Laser Annealing in p‐Type Low‐Temperature Polycrystalline Silicon Thin‐Film Transistors

SID Symposium Digest of Technical Papers
Theoretical and Computational Physics
article

P‐80: Systematic Study on Scanning Direction of Excimer Laser Annealing in p‐Type Low‐Temperature Polycrystalline Silicon Thin‐Film Transistors

article en

Abstract

The bright points caused by off‐state leakage current constricted the reliability of LTPS TFT. The effect of ELA scanning direction on TFT properties was demonstrated. The trap state densities of grain boundary and poly‐Si/SiO##2 interface and barrier were calculated to clarify the mechanism of high off‐state leakage current.

SID Symposium Digest of Technical PapersVol. 56(1)
BOE Technology Group (China) (CN)
Openalex Percentile: Top 43%
Theoretical and Computational Physics
DOISourceOpenAlex
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P‐80: Systematic Study on Scanning Direction of Excimer Laser Annealing in p‐Type Low‐Temperature Polycrystalline Silicon Thin‐Film Transistors · SID Symposium Digest of Technical Papers (2025) | TGRS Research Map | TGRS