P‐18: Self‐Aligned Bottom‐Gate Top‐Contact Vertical‐Channel In‐Ga‐Zn‐Oxide Thin‐Film Transistor

We show a simple process to produce a novel bottom‐gate vertical‐channel In‐Ga‐Zn‐Oxide (IGZO) thin‐film transistors (TFTs) with a 400‐nm effective channel length. The process is made possible by the conformai deposition of IGZO. The reported device showed promising performance with at least 10 6 on‐off current ratio and 112 εA/mm current per channel width (both measured at V ds = 0.1 V), comparable to the state‐of‐the‐art top‐gate vertical‐channel IGZO TFTs.