47‐3: Submicron c‐IGO TFT Exhibiting High Performance and Excellent Stability for Ultra‐High‐Resolution Display

We report a high‐quality, stack poly‐crystalline InGaO (c‐IGO) thin‐film transistor (TFT) for AMOLED display backplanes. The active layer with high Ga was sequentially deposited on low Ga IGO layer by spray pyrolysis. The TFTs with a high‐Ga top layer demonstrated superior stability for the TFT with 0.74 μm channel length, exhibiting the field effect mobility of 9.18 cm 2 /V•s and VTH of 0 V with a high on/off ratio of > 10 8 .

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Publication Details

Journal
SID Symposium Digest of Technical Papers
Published
2025-06-01
DOI
https://doi.org/10.1002/sdtp.18241
Primary Topic
Geochemistry and Geologic Mapping
Type
article
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article

47‐3: Submicron c‐IGO TFT Exhibiting High Performance and Excellent Stability for Ultra‐High‐Resolution Display

SID Symposium Digest of Technical Papers
Geochemistry and Geologic Mapping
article

47‐3: Submicron c‐IGO TFT Exhibiting High Performance and Excellent Stability for Ultra‐High‐Resolution Display

article en

Abstract

We report a high‐quality, stack poly‐crystalline InGaO (c‐IGO) thin‐film transistor (TFT) for AMOLED display backplanes. The active layer with high Ga was sequentially deposited on low Ga IGO layer by spray pyrolysis. The TFTs with a high‐Ga top layer demonstrated superior stability for the TFT with 0.74 μm channel length, exhibiting the field effect mobility of 9.18 cm 2 /V•s and VTH of 0 V with a high on/off ratio of > 10 8 .

SID Symposium Digest of Technical PapersVol. 56(1)
Kyung Hee University (KR)
Affordable and clean energy
Openalex Percentile: Top 70%
Geochemistry and Geologic Mapping
DOISourceOpenAlex
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47‐3: Submicron c‐IGO TFT Exhibiting High Performance and Excellent Stability for Ultra‐High‐Resolution Display · SID Symposium Digest of Technical Papers (2025) | TGRS Research Map | TGRS