P‐133: Analysis of Quantum Well‐Stacking Order in Multi‐Quantum Well MicroLEDs

This study investigates the influence of quantum well stacking order on the emission characteristics of InGaN‐based micro‐LEDs using COMSOL Multiphysics simulations. Six configurations of red, green, and blue quantum wells were analyzed under varying current injection conditions. The findings reveal that spatial carrier dynamics and radiative recombination processes are significantly affected by the stacking sequence, with the n‐InGaN‐blue‐green‐red‐p‐InGaN configuration exhibiting the most uniform carrier distribution and highest emission efficiency. These results provide valuable insights for optimizing micro‐LED designs to achieve enhanced performance in nextgeneration optoelectronic devices.