26‐4: <i>Late‐News Paper:</i> A Bottom‐Up InGaN Technology for Ultra‐High Brightness R,G,B‐Emitting MicroLEDs

We present a bottom‐up technology for producing dislocation‐free, strain‐relaxed InGaN microLEDs in the form of sub‐micron scale hexagonal platelets. The use of InGaN barrier material enables high indium‐content quantum wells with peak emission tunable from blue to deep red (&gt; 670 nm). These platelets do not suffer from plasma induced damage and exhibit internal quantum efficiency values up to 60% for deep red emitting quantum wells. We further show red microLEDs exhibiting dominant wavelengths above 630 nm for drive currents up to 50 A/cm2, which is well suited for wide color gamut, and ultra‐high brightness displays.