P‐1: Improving the Negative Bias Illumination Stress‐Induced Instability of High Mobility Oxide Thin‐film Transistors

The degradation mechanism of Negative Bias Illumination Stress (NBIS) in high mobility oxide thin‐film transistors has been systematically investigated and elaborated in this paper. The optimization scheme of fabrication process is also proposed according to our theory. The top gate self‐align IGZTO TFT was fabricated with different process conditions and the stability with Positive Bias Temperature Stress (PBTS) of 0.44V and NBIS of ‐1.12V are achieved by optimizing the oxide annealing and I LD deposition process. At the same time, the device shows the excellent basic electrical properties with Vth of 0.29V and Mobility of 20.88 cm2/V•s.