P‐14: LTPS TFT‐Based Micro Light‐Emitting Diode Pixel Circuit with Fast Falling Time

We proposed a p‐type low‐temperature polycrystalline silicon thin‐film transistor(TFT)‐based micro light‐emitting diode (μLED) pixel circuit using pulse width modulation driving method. The circuit achieved fast falling times of 1.8 μs by increasing the source voltage of the driving TFT when μLED turns off.

Institutions

Korea Aerospace University (KR)
Sungkyunkwan University (KR)

Publication Details

Journal: SID Symposium Digest of Technical Papers
Published: 2025-06-01
DOI: https://doi.org/10.1002/sdtp.18462
Primary Topic: Theoretical and Computational Physics
Type: article
Field-Weighted Citation Impact: 0.00

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article

P‐14: LTPS TFT‐Based Micro Light‐Emitting Diode Pixel Circuit with Fast Falling Time

Jun 1, 2025

SID Symposium Digest of Technical Papers

Theoretical and Computational Physics

article

P‐14: LTPS TFT‐Based Micro Light‐Emitting Diode Pixel Circuit with Fast Falling Time

June 1, 2025article en

Abstract

SID Symposium Digest of Technical PapersVol. 56(1)

Korea Aerospace University (KR), Sungkyunkwan University (KR)

Affordable and clean energy

Openalex Percentile: Top 44%

Theoretical and Computational Physics

DOI Source OpenAlex

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P‐14: LTPS TFT‐Based Micro Light‐Emitting Diode Pixel Circuit with Fast Falling Time · SID Symposium Digest of Technical Papers (2025) | TGRS Research Map | TGRS