26‐1: <i>Invited Paper:</i> Breaking the Efficiency Bottleneck of microLEDs Through Nanoscale and Excitonic Engineering

Light emitting diodes (LEDs) on the micrometer scale or smaller, also known as micro‐LEDs, have been under intense investigations for their immense potential for various applications. In particular, the InGaN based IIInitride micro‐LEDs have attracted much attention due to the many desirable materials properties such as wavelength tunability across the entire visible spectrum and high brightness. Yet, due to the lattice mismatch and a lack of intermiscibility between InN and GaN, it has remained challenging to achieve high efficiency green and red‐emitting InGaN‐based LEDs, especially at micro‐ and nano‐scales. Here, we present recent progress on InGaN nanowire based green and red‐emitting micro‐LEDs. We show that nanoscale and excitonic engineering offers a promising path to address the efficiency cliff of micro/nano‐scale LEDs. Our work points to pathways toward realization of a full‐color, all‐IIInitride micro‐LED display.

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Publication Details

Journal
SID Symposium Digest of Technical Papers
Published
2025-06-01
DOI
https://doi.org/10.1002/sdtp.18158
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
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article

26‐1: Invited Paper: Breaking the Efficiency Bottleneck of microLEDs Through Nanoscale and Excitonic Engineering

SID Symposium Digest of Technical Papers
Geochemistry and Geologic Mapping
article

26‐1: Invited Paper: Breaking the Efficiency Bottleneck of microLEDs Through Nanoscale and Excitonic Engineering

article en

Abstract

Light emitting diodes (LEDs) on the micrometer scale or smaller, also known as micro‐LEDs, have been under intense investigations for their immense potential for various applications. In particular, the InGaN based IIInitride micro‐LEDs have attracted much attention due to the many desirable materials properties such as wavelength tunability across the entire visible spectrum and high brightness. Yet, due to the lattice mismatch and a lack of intermiscibility between InN and GaN, it has remained challenging to achieve high efficiency green and red‐emitting InGaN‐based LEDs, especially at micro‐ and nano‐scales. Here, we present recent progress on InGaN nanowire based green and red‐emitting micro‐LEDs. We show that nanoscale and excitonic engineering offers a promising path to address the efficiency cliff of micro/nano‐scale LEDs. Our work points to pathways toward realization of a full‐color, all‐IIInitride micro‐LED display.

SID Symposium Digest of Technical PapersVol. 56(1)
University of Michigan (US)
Openalex Percentile: Top 70%
Geochemistry and Geologic Mapping
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26‐1: <i>Invited Paper:</i> Breaking the Efficiency Bottleneck of microLEDs Through Nanoscale and Excitonic Engineering · SID Symposium Digest of Technical Papers (2025) | TGRS Research Map | TGRS