4‐1: <i>Invited Paper:</i> Enabling Next‐Generation Metal‐Oxide Backplane Technology by Atomic Layer Deposition

Plasma Enhanced Atomic Layer Deposition (PEALD) dielectrics was developed for metal oxide thin‐film transistors. The improvement on Vth uniformity, SS tunability, and stability were previously inaccessible by conventional PECVD dielectrics. Our PEALD provides uniform and high‐quality films with accurate control of precursor/plasma and fast purge architecture, which is scalable up to Gen8 size.