P‐159: High Performance, Flexible Ferroelectric Thin Film Transistor on PI Substrate

We present flexible ferroelectric HZO TFTs on polyimide (PI) substrate, with a nanocrystalline IGZO active semiconductor. The TFTs exhibit stabilized ferroelectricity at 350 °C, anticlockwise hysteresis with memory window (MW) of ~5 V, subthreshold swing (SS) of 120 mV/decade, and ION/IOFF ratio of ~8.9×10 6 . The MW of the flexible FE‐TFTs changes a little upon mechanical bending strain (MBS) of 0.32% at 2 mm radius.