P‐226: <i>Late‐News Poster:</i> Argon Plasma‐Induced Rare‐metal‐free Amorphous Oxide Source‐Gated Transistors
Source‐gated transistors using solution‐processed amorphous tin (IV) oxide were developed with selective argon plasma treatment under the source region. It effectively created a Schottky contact with the ohmic metal source, eliminating the need for Schottky metals. This approach promotes advancements in low‐power electronics, providing sustainable solutions for future technological applications.
Institutions
- Kindai University Hospital (JP)
- Nara Institute of Science and Technology (JP)
- University of the Philippines Diliman (PH)
- Kindai University (JP)
Publication Details
- Journal
- SID Symposium Digest of Technical Papers
- Published
- 2025-06-01
- DOI
- https://doi.org/10.1002/sdtp.18475
- Primary Topic
- Geochemistry and Geologic Mapping
- Type
- article
- Field-Weighted Citation Impact
- 0.00