43‐3: Research and Optimal Driving Methodology for Image Quality Defects Occurring in 4K 1.3‐in. OLEDoS

The demand for extended reality (XR) has been increasing rapidly, necessitating advancements in display technology. OLED on Silicon (OLEDoS) has emerged as a critical solution for XR applications due to its high integration and operation speed. However, compared to conventional mobile pixel circuits, OLEDoS behaves differently due to two key factors: The first is the capacitor dividing method of data write, which induces strong horizontal crosstalk. The second is the small storage capacitance compared to parasitic capacitance, which causes fast degradation, low step efficiency, and high temperature sensitivity. In this study, we identified the mechanism of horizontal crosstalk in a 1.3‐inch 4K OLEDoS display and applied theorybased tuning to achieve high‐quality crosstalk specifications. Additionally, we introduced an anode coupling model that accurately predicts the effects of degradation, step efficiency, and temperature sensitivity. Through these analyses, we established an optimal driving methodology to address image quality defects and significantly contributed to the commercialization of micro‐display products. Furthermore, understanding the analyzed root causes of such defects provides valuable insights into improving the fundamental advancement of OLEDoS design technology for future XR applications.