54‐1: <i>Invited Paper:</i> Amorphous p‐Channel Tellurium Oxide Transistors

This presentation discusses high‐performance p‐type oxide semiconductors for thin‐film transistors (TFTs). It highlights selenium‐alloyed tellurium in a tellurium sub‐oxide matrix, demonstrating stable p‐channel TFTs with high mobility (10~15 cm 2 /V·s), on/off ratios (10 6 –10 7 ), and long‐term stability, driven by delocalized valence bands and selenium alloying for enhanced transport.