77‐2: Trifold OLED Display Fabricated Through Low‐Temperature Process Using Short‐Channel Top‐Gate Self‐Aligned Field‐Effect Transistor with Crystal IO

We developed a low‐temperature process for a top‐gate selfaligned FET with L = 2 μm including a crystal indium oxide active layer, and achieved a field‐effect mobility of 50 cm 2 /Vs. Using this technology, we successfully fabricated the world's first trifold OLED display using crystal indium oxide.

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Publication Details

Journal
SID Symposium Digest of Technical Papers
Published
2025-06-01
DOI
https://doi.org/10.1002/sdtp.18353
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
0.00
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article

77‐2: Trifold OLED Display Fabricated Through Low‐Temperature Process Using Short‐Channel Top‐Gate Self‐Aligned Field‐Effect Transistor with Crystal IO

SID Symposium Digest of Technical Papers
Geochemistry and Geologic Mapping
article

77‐2: Trifold OLED Display Fabricated Through Low‐Temperature Process Using Short‐Channel Top‐Gate Self‐Aligned Field‐Effect Transistor with Crystal IO

article en

Abstract

We developed a low‐temperature process for a top‐gate selfaligned FET with L = 2 μm including a crystal indium oxide active layer, and achieved a field‐effect mobility of 50 cm 2 /Vs. Using this technology, we successfully fabricated the world's first trifold OLED display using crystal indium oxide.

SID Symposium Digest of Technical PapersVol. 56(1)
Semiconductor Energy Laboratory (Japan) (JP)
Affordable and clean energy
Openalex Percentile: Top 70%
Geochemistry and Geologic Mapping
DOIOpen Access PDFOpenAlex
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77‐2: Trifold OLED Display Fabricated Through Low‐Temperature Process Using Short‐Channel Top‐Gate Self‐Aligned Field‐Effect Transistor with Crystal IO · SID Symposium Digest of Technical Papers (2025) | TGRS Research Map | TGRS