P‐20: High Subthreshold Swing Using High‐Performance Dual‐Gate IZO/IGZTO TFTs for AMOLED Display
AMOLED displays at low gray levels require high SS to control the data potential easily. In this study, we present a high‐mobility, coplanar dual‐gate (DG) dual‐channel TFT, where the SS can be tailored. This approach enables the device to function effectively as a driving TFT, achieving SS of 0.618 V/dec. The proposed DG, dual‐sweep (DS) a‐IZO/a‐IGZTO TFT exhibits µFE of 65 cm 2 /V.s, V TH of 0.46 V, and on/off current ratio of 108.
Institutions
- Applied Materials (United States) (US)
- Japan Display (Japan) (JP)
- Kyung Hee University (KR)
Publication Details
- Journal
- SID Symposium Digest of Technical Papers
- Published
- 2025-06-01
- DOI
- https://doi.org/10.1002/sdtp.18468
- Primary Topic
- Geochemistry and Geologic Mapping
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Research Foundation
- National Research Foundation of Korea