65‐2: <i>Invited Paper:</i> Ultra‐Flexible Monolithic Three‐Dimensional CMOS Devices and Circuits
This paper reviews advancements in flexible three‐dimensional CMOS electronics, focusing on monolithic three‐dimensional architecture that integrates vertically stacked carbon nanotube and indium gallium zinc oxide transistors. By utilizing shared gates and drains, and eliminating inter‐tier vias, the design enhances routing efficiency, achieves 45% area reduction, and demonstrates exceptional flexibility. Circuits like ring oscillators and SRAMs exemplify high integration and functionality, highlighting their significance for complex flexible electronics.
Institutions
- Chinese University of Hong Kong, Shenzhen (CN)
Publication Details
- Journal
- SID Symposium Digest of Technical Papers
- Published
- 2025-06-01
- DOI
- https://doi.org/10.1002/sdtp.18310
- Primary Topic
- Geochemistry and Geologic Mapping
- Type
- article
- Field-Weighted Citation Impact
- 0.00