40‐2: Highly Robust, Dual‐Gate Polycrystalline In <sub>0.7</sub> Ga <sub>0.3</sub> O TFTs by Spray Pyrolysis for Low‐Cost Manufacturing of OLED Display

We report dual‐gate polycrystalline (Poly) In 0.7 Ga 0.3 O thin film transistor (TFT) by spray pyrolysis (SP) process. The dual gate TFTs exhibits saturation mobility (µSAT) of ~40.23 cm 2 V ‐1 s 1 with excellent stability under bias and temperature stress (Δ VTH = 0 V for PBTS, ΔVTH = ‐0.1 V for NBTS). Furthermore, a 2.5‐inch OLED display made of SP poly‐In 0.7 Ga 0.3 O has been demonstrated

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Publication Details

Journal
SID Symposium Digest of Technical Papers
Published
2025-06-01
DOI
https://doi.org/10.1002/sdtp.18213
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
0.00

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article

40‐2: Highly Robust, Dual‐Gate Polycrystalline In 0.7 Ga 0.3 O TFTs by Spray Pyrolysis for Low‐Cost Manufacturing of OLED Display

SID Symposium Digest of Technical Papers
Geochemistry and Geologic Mapping
article

40‐2: Highly Robust, Dual‐Gate Polycrystalline In 0.7 Ga 0.3 O TFTs by Spray Pyrolysis for Low‐Cost Manufacturing of OLED Display

article en

Abstract

We report dual‐gate polycrystalline (Poly) In 0.7 Ga 0.3 O thin film transistor (TFT) by spray pyrolysis (SP) process. The dual gate TFTs exhibits saturation mobility (µSAT) of ~40.23 cm 2 V ‐1 s 1 with excellent stability under bias and temperature stress (Δ VTH = 0 V for PBTS, ΔVTH = ‐0.1 V for NBTS). Furthermore, a 2.5‐inch OLED display made of SP poly‐In 0.7 Ga 0.3 O has been demonstrated

SID Symposium Digest of Technical PapersVol. 56(1)
Kyung Hee University (KR)
Ministry of Trade, Industry and Energy
Openalex Percentile: Top 70%
Geochemistry and Geologic Mapping
DOIOpen Access PDFOpenAlex
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40‐2: Highly Robust, Dual‐Gate Polycrystalline In <sub>0.7</sub> Ga <sub>0.3</sub> O TFTs by Spray Pyrolysis for Low‐Cost Manufacturing of OLED Display · SID Symposium Digest of Technical Papers (2025) | TGRS Research Map | TGRS