P‐242: <i>Late‐News Poster:</i> Boosting Light Extraction in AlGaN‐Based Deep Ultraviolet Micro‐LEDs Through <i>p</i> ‐GaN Layer Removal

In this study, we propose an AlGaN‐based deep ultraviolet micro‐light‐emitting diode (DUV Micro‐LED) with the removal of the contact layer p‐GaN, and based on this, we investigate the effects of different concentrations of the hole injection layer. The research shows that the proposed p‐GaN‐free LED structure can significantly enhance the device's light extraction efficiency (LEE), thereby greatly improving the external quantum efficiency (EQE). Meanwhile, the angular emission intensity of the p‐GaNfree LED structure can be improved by increasing the doping concentration of the hole injection layer.