Fabrication and Investigation of Switching Properties in HFSNO₂-based RRAM

This study investigated the switching characteristics of HfSnO 2 as the insulating layer in Resistive Random Access Memory (RRAM) compared with those of Conductive-Bridge Random Access Memory (CBRAM) (Ag/HfSnO 2 /Pt) and Oxide-based Random Access Memory (OxRAM) (Al/HfSnO 2 /Pt). CBRAM exhibited superior performance in terms of (set Voltage) Vset, resistance uniformity and endurance. Increasing the HfSnO 2 thickness increased Vset but decreased endurance; a 40[Formula: see text]nm layer achieved a Vset of 0.4[Formula: see text]V with over 1000 cycles, whereas a 20[Formula: see text]nm layer reduced Vset to 0.35[Formula: see text]V but endured only 306 cycles. Setting the sputtering pressure to 5[Formula: see text]mTorr decreased Vset to 0.369[Formula: see text]V with an endurance exceeding 1000 cycles, whereas increasing the O 2 ratio to 30% decreased Vset to 0.33[Formula: see text]V with similar endurance. To further enhance performance, we used a two-layer HfSnO 2 structure, achieving a Vset of 0.259[Formula: see text]V with an endurance surpassing 1000 cycles. This study demonstrated that optimizing the HfSnO 2 thickness, sputtering conditions and multilayer structures significantly improves HfSnO 2 -based RRAM performance.