P‐21: A Wide‐Data‐Range Pixel Circuit for High‐Pixel‐Density Mobile Displays Using Double‐Gate Oxide TFTs†

For high‐pixel‐density mobile displays, the pixel current should be very low, which forces the driving transistor of the pixel to operate in the subthreshold region. In this region, the data voltage range becomes very narrow, making it very challenging to accommodate 10‐bit data voltages. Additionally, this results in large current deviations. The proposed circuit, composed of four TFTs and two capacitors expands the data voltage range from 1.2V to 6.5V compared to the conventional pixel circuit. This improvement is achieved by controlling the bottom gate voltage of double‐gate thin‐film transistors (TFTs). The expansion of data voltage range also reduces the current deviation ratio from 150.9% to 71.7% when no compensation scheme is applied.

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Publication Details

Journal
SID Symposium Digest of Technical Papers
Published
2025-06-01
DOI
https://doi.org/10.1002/sdtp.18469
Citations
1
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
2.48
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article

P‐21: A Wide‐Data‐Range Pixel Circuit for High‐Pixel‐Density Mobile Displays Using Double‐Gate Oxide TFTs†

1 citations
SID Symposium Digest of Technical Papers
Geochemistry and Geologic Mapping
2.48
article

P‐21: A Wide‐Data‐Range Pixel Circuit for High‐Pixel‐Density Mobile Displays Using Double‐Gate Oxide TFTs†

article en
1 citations

Abstract

For high‐pixel‐density mobile displays, the pixel current should be very low, which forces the driving transistor of the pixel to operate in the subthreshold region. In this region, the data voltage range becomes very narrow, making it very challenging to accommodate 10‐bit data voltages. Additionally, this results in large current deviations. The proposed circuit, composed of four TFTs and two capacitors expands the data voltage range from 1.2V to 6.5V compared to the conventional pixel circuit. This improvement is achieved by controlling the bottom gate voltage of double‐gate thin‐film transistors (TFTs). The expansion of data voltage range also reduces the current deviation ratio from 150.9% to 71.7% when no compensation scheme is applied.

SID Symposium Digest of Technical PapersVol. 56(1)
Hanyang University (KR)
Affordable and clean energy
Openalex Percentile: Top 7%
Geochemistry and Geologic Mapping
2.48
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