P‐227: <i>Late‐News Poster:</i> Insight into the Effect of the Thickness of Gate Insulator on the Hysteresis by TCAD Simulation

The effect of thickness of gate insulator (GI) film on the performance of hysteresis has been investigated by numerical simulation. With the thickness of GI increasing, the hysteresis become worse. The proportion of surface charge potential on surface potential determined the sensitivity of threshold voltage shift. The thick GI brings the high proportion of surface charge potential, triggering the large threshold voltage shift and then leading to the deterioration of hysteresis. We believe that the hysteresis is greatly influenced by surface charge potential. Rationally designed simulation mode will help us interpret the phenomenon of experiment results comprehensively.