89‐5: <i>Late‐News Paper:</i> Silicon‐on‐Nothing Technology Based on Silicon Migration in Argon Annealing for Display‐Sensor Integration
For applications involving interactive display‐sensor systems, this study investigates silicon migration technology using argon annealing for low‐cost silicon‐on‐nothing structures to improve integration compatibility. Argon‐based rapid thermal processing offers enhanced safety and cost reduction compared to hydrogenbased methods. The results demonstrate the successful formation of in‐situ‐sealed silicon diaphragms with uniform thickness and varying dimensions for pressure sensing applications.
Institutions
- BOE Technology Group (China) (CN)
Publication Details
- Journal
- SID Symposium Digest of Technical Papers
- Published
- 2025-06-01
- DOI
- https://doi.org/10.1002/sdtp.18407
- Primary Topic
- Geochemistry and Geologic Mapping
- Type
- article
- Field-Weighted Citation Impact
- 0.00