82‐4: <i>Invited Paper:</i> Research on Patterned Cu Growth in Electrochemical Process of Large Glass Substrate

This paper studies the growth of patterned Cu prepared by electrochemical process for the G6 large size glass substrate in the world firstly. The key parameters affecting electroplating uniformity were studied by simulation. After a series of trial runs, G6 glass substrate was prepared by electrochemical method based on the optimized parameters. The thickness of G6 electroplated Cu can meet 5~11um and the uniformity of the corresponding film layer can be reduced to less than 20%. The simulation model shows good performance to guide design and device modification.

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Publication Details

Journal
SID Symposium Digest of Technical Papers
Published
2025-06-01
DOI
https://doi.org/10.1002/sdtp.18376
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
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article

82‐4: Invited Paper: Research on Patterned Cu Growth in Electrochemical Process of Large Glass Substrate

SID Symposium Digest of Technical Papers
Geochemistry and Geologic Mapping
article

82‐4: Invited Paper: Research on Patterned Cu Growth in Electrochemical Process of Large Glass Substrate

article en

Abstract

This paper studies the growth of patterned Cu prepared by electrochemical process for the G6 large size glass substrate in the world firstly. The key parameters affecting electroplating uniformity were studied by simulation. After a series of trial runs, G6 glass substrate was prepared by electrochemical method based on the optimized parameters. The thickness of G6 electroplated Cu can meet 5~11um and the uniformity of the corresponding film layer can be reduced to less than 20%. The simulation model shows good performance to guide design and device modification.

SID Symposium Digest of Technical PapersVol. 56(1)
Hefei University of Technology (CN), BOE Technology Group (China) (CN)
Openalex Percentile: Top 71%
Geochemistry and Geologic Mapping
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