P‐72: A Novel High‐Gain Operational Amplifier with Cross‐Coupled Pair Based on a‐IGZO TFTs

In this paper, we present a novel operational amplifier (OPAMP) with cross coupled pair (XCP) topology based on amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin film transistors (TFTs). XCP structure is employed to boost the gain of the common‐drain input stage, thus enabling the OPAMP to achieve a high gain of 34.2 dB. From the simulation results, the proposed OPAMP was confirmed to exhibit 3 dB bandwidth of 48.4 kHz, unit‐gain frequency of 2.15 MHz, and phase margin of 48◦, respectively.