20‐1: <i>Invited Paper:</i> Development of a Novel p‐Dopant for OLED and Its Combination with HTL to Reduce Leakage Current
This study focuses on two recently developed p‐Dopant materials, PD‐1 and PD‐2, and their combinations with various hole transport layers (HTLs) to reduce leakage current in organic light‐emitting diodes (OLEDs). By comparing these new p‐Dopants with reference p‐Dopants PD‐0 and 1,4,5,8,9,11‐hexaazatriphenylene‐ hexacarbonitrile (HATCN), we demonstrate significant improvements in electrical performance and lateral conductivity reduction with the optimal device properties. In addition, our new p‐Dopants have an optical advantage due to their low absorption. Our findings highlight the potential of optimized p‐Dopant selection in enhancing OLED efficiency and stability while addressing critical challenges associated with lateral leakage current.
Institutions
- Japan Display (Japan) (JP)
- LG (United States) (US)
- LG (South Korea) (KR)
Publication Details
- Journal
- SID Symposium Digest of Technical Papers
- Published
- 2025-06-01
- DOI
- https://doi.org/10.1002/sdtp.18135
- Primary Topic
- Geochemistry and Geologic Mapping
- Type
- article
- Field-Weighted Citation Impact
- 0.00