48‐2: Improving the Reliability of High‐Mobility Oxide TFTs through TCAD Simulation of Optimizing Device Structure

High‐mobility oxide TFTs have great application prospects in high‐end display products. To achieve mass production applications, improving the reliability of high‐mobility oxide backplanes has become an urgent issue to be resolved. During the development of IGZTO oxide devices, we found that the TFT device is turned on, as Vds voltage increases, drain current will suddenly drop sharply at a certain critical point. In response to this issue, we analyzed the degradation mechanism: the hotcarrier effect under large electric field in the pinch‐off region leads to defects increase of channel at the drain end, causing device degradation. TCAD simulation reproduced the IV degradation phenomenon, confirming the defects increase of channel at the drain end. The simulation of device size's impact on the channel electric field showed that increasing channel length and reducing drain voltage can effectively reduce the maximum electric field, while device width has no effect. Additionally, the simulation compared electric field distribution of different TFT structures, and the results indicated: horizontal electric field TG LS‐Gate ≈ LS‐Source > TG without‐LS > TG Double‐Gate, which provides a reference direction for achieving high‐reliability high‐mobility oxide backplanes and improving drain current down phenomenon .In this simulation work, we have developed a new AI‐TCAD combined high‐efficiency intelligent tuning model, significantly improving efficiency.