15‐4: Textile‐Based IGZO TFTs with 2T1C Pixel Circuits for Wearable AMOLEDs

This study demonstrates flexible IGZO thin‐film transistors (TFTs) fabricated on textile substrates using low‐temperature processing below 150°C. The TFTs exhibit mechanical reliability under repeated bending with critical strains of approximately 1.6% for single devices and 0.7% for 2T1C circuits, stably driving activematrix organic light‐emitting diodes (AMOLED) for wearable displays.