VERIFICATION AND SIMULATION OF HIGH GAIN CLASS C POWER AMPLIFIER USING GAN TRANSISTOR AT X BAND FREQUENCY

<p>In the current methodology Effective impedance matching is essential for GaN transistors to get maximum performance, which may be difficult owing to their high-frequency and power attributes, frequently necessitating precise biasing for effective operation in Class AB mode. Maintaining stability across the operational frequency spectrum might be more intricate than using silicon transistors. Class C power amplifiers utilizing GaN (Gallium Nitride) transistors present numerous advantages over Class AB power amplifiers, especially in scenarios demanding efficiency and elevated power. Class C amplifiers function with a conduction angle of less than 180 degrees, yielding significantly greater efficiency than Class AB amplifiers. GaN transistors improve efficiency owing to their increased electron mobility and less on-resistance. The increased efficiency of Class C amplifiers results in less power dissipation as heat. GaN transistors, due to their exceptional thermal performance, permit more efficient heat management, which is essential in high-power applications. This proposal presents the design of a GaN power amplifier operating at S-band frequency. Class AB power amplifiers with GaN (Gallium Nitride) transistors have several benefits, such as enhanced efficiency and power density. The suggested power amplifier may be developed with the ADS (Advanced Design System) software tool at 150nm technology. The amplifier's properties, such as gain, stability factor, and harmonic balancing, will be advantageous for radar applications.</p>