Compact Reflection-Type Phase Shifter MMIC for Ka-Band in Aligned Carbon Nanotube Array

This letter presents a novel Ka-band reflection-type phase shifter (RTPS) monolithic microwave-integrated circuit (MMIC) implemented in aligned carbon nanotube (CNT) technology. The design integrates a single-layer, wire-bonded Lange coupler loaded with CNT-based tunable Schottky diodes, offering a compact and efficient solution for monolithic integration. It features a lateral diode structure with a cut-off frequency beyond 200 GHz, fabricated using aligned CNT (A-CNT) arrays characterized by high density and exceptional semiconducting purity on a silicon substrate. The proof-of-concept prototype achieves better than 10 dB return loss across a 12% fractional bandwidth. It further demonstrates a maximum phase shift of 65° at 42 GHz with a compact chip area of only 1 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.

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Publication Details

Journal
IEEE Microwave and Wireless Technology Letters
Published
2025-08-15
DOI
https://doi.org/10.1109/lmwt.2025.3594036
Citations
1
Primary Topic
Theoretical and Computational Physics
Type
article
Field-Weighted Citation Impact
1.26
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article

Compact Reflection-Type Phase Shifter MMIC for Ka-Band in Aligned Carbon Nanotube Array

1 citations
IEEE Microwave and Wireless Technology Letters
Theoretical and Computational Physics
1.26
article

Compact Reflection-Type Phase Shifter MMIC for Ka-Band in Aligned Carbon Nanotube Array

article en
1 citations

Abstract

This letter presents a novel Ka-band reflection-type phase shifter (RTPS) monolithic microwave-integrated circuit (MMIC) implemented in aligned carbon nanotube (CNT) technology. The design integrates a single-layer, wire-bonded Lange coupler loaded with CNT-based tunable Schottky diodes, offering a compact and efficient solution for monolithic integration. It features a lateral diode structure with a cut-off frequency beyond 200 GHz, fabricated using aligned CNT (A-CNT) arrays characterized by high density and exceptional semiconducting purity on a silicon substrate. The proof-of-concept prototype achieves better than 10 dB return loss across a 12% fractional bandwidth. It further demonstrates a maximum phase shift of 65° at 42 GHz with a compact chip area of only 1 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.

IEEE Microwave and Wireless Technology LettersVol. 35(11)
Hunan University of Science and Technology (CN), Beijing University of Posts and Telecommunications (CN), Peking University (CN), Hunan Institute of Engineering (CN), Xiangtan University (CN)
Openalex Percentile: Top 15%
Theoretical and Computational Physics
1.26
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Compact Reflection-Type Phase Shifter MMIC for Ka-Band in Aligned Carbon Nanotube Array · IEEE Microwave and Wireless Technology Letters (2025) | TGRS Research Map | TGRS