Study on electrochemically deposited CoPt layer and demonstration of write operation for storage layer of three-dimensional domain wall motion memory

Three-dimensional magnetic memory devices offer superior performance but are challenging to realize using conventional physical vapor deposition due to nanohole clogging. To address this limitation, pulse electrochemical deposition was employed to fabricate high-quality CoPt thin films with tunable composition, smooth morphology, and enhanced magnetic anisotropy. Hall bar devices were microfabricated from the deposited films, enabling quantitative evaluation of spin-orbit torque (SOT) through second harmonic Hall measurements. Current-induced SOT-driven magnetization switching was successfully demonstrated for the first time in an electrochemically deposited magnetic material. Furthermore, high-aspect-ratio CoPt nanowires with well-defined magnetic properties and highly oriented crystal texture were fabricated, highlighting their potential for realistic three-dimensional memory cells. This work establishes a unique and promising pathway for next-generation spintronic memory device fabrication by integrating electrochemical deposition with SOT functionality.