Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells

Antimony selenide (Sb2Se3) is an Earth-abundant and non-toxic material that stands out as a promising absorber for the fabrication of thin film solar cells. Despite significant advancements in recent years, all the devices reported in the literature exhibit open-circuit voltages well below the theoretical value. Identifying the factors contributing to this low voltage is an essential step for increasing the efficiency beyond the recently attained 10% milestone and moving closer to the theoretical limit. In this paper, we present the results of an in-depth analysis of a Sb2Se3 solar cell in the common superstrate configuration. By making use of current density–voltage characteristic as a function of both temperature and wavelength, capacitance–voltage measurements, and admittance spectroscopy, we ascribe the low open-circuit voltage to the presence of a potential barrier within the absorber material near the junction interface Furthermore, it was observed that the junction behavior in the dark and under illumination changes, which is compatible with the presence of deep electronic levels connected with intrinsic point defects.