Taylor's Law and Low-Frequency Noise as Indicators for BEOL Dielectric Materials Reliability

The reliability of dielectric materials is a key concern in the semiconductor industry, particularly in BEOL interconnections. As devices miniaturize, insulating materials between metal lines face increasing electrical and mechanical stresses, leading to degradation and potential failure, which impacts circuit longevity and performance. Low-k dielectrics, used to reduce capacitance and enhance performance, are especially susceptible to these stresses. This study focuses on SiCO dielectrics in BEOL applications, using two methodologies. The first method involves current-voltage (IV) measurements across various temperatures to understand the material’s conduction mechanisms under different conditions. The second method applies Taylor’s Law to analyze current fluctuations, specifically Random Telegraph Noise (RTN), caused by the switching behavior of defects or traps. This provides insights into the material's state, potentially serving as a non-destructive diagnostic tool. Experiments were conducted using a Metal-Insulator-Metal (MIM) capacitor, and MATLAB modeling simulated systems with N traps generating RTN signals. The study evaluates both IV measurements and Taylor's Law, offering a dual-method approach to understanding and predicting dielectric degradation in BEOL applications.