Nonmagnetic fractional conductance in high mobility InAs quantum point contacts

In this paper, we report the magnetoelectronic properties of high mobility InAs quantum point contacts grown on InP substrates. The InAs quantum well is embedded between In0.72Ga0.28As cladding layers and In0.81Al0.19As barrier layers, and is populated via self-accumulation. The one-dimensional (1D) conductance reaches a maximum value of 17 plateaus, quantized in units of 2e2/h, where e is the fundamental unit of charge and h is Planck’s constant. The in-plane effective g factor was estimated to be −10.9 ± 1.5 for subband N = 1 and −10.8 ± 1.6 for subband N = 2. Furthermore, a study of the nonmagnetic fractional conductance states at 0.2 (e2/h) and 0.1 (e2/h) is provided. While their origin remains under discussion, evidence suggests that they arise from strong electron-electron interactions and momentum-conserving backscattering between electrons in two distinct channels within the 1D region. This phenomenon may also be interpreted as an entanglement between the two channel directions facilitated by momentum-conserving backscattering.