Lateral deep depletion diamond MOSFET breakdown voltage improvement up to 950 V

Publication Details

Journal
SPIRE - Sciences Po Institutional REpository
Published
2025-03-19
Primary Topic
Diamond and Carbon-based Materials Research
Type
article
Field-Weighted Citation Impact
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article

Lateral deep depletion diamond MOSFET breakdown voltage improvement up to 950 V

SPIRE - Sciences Po Institutional REpository
Diamond and Carbon-based Materials Research
article

Lateral deep depletion diamond MOSFET breakdown voltage improvement up to 950 V

article en

Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Openalex Percentile: Top 59%
Diamond and Carbon-based Materials Research
OpenAlex
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Lateral deep depletion diamond MOSFET breakdown voltage improvement up to 950 V · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS