Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs

This paper presents a method of estimating gate oxide reliability and lifetime of commercially available MOSFETs. The estimation is calculated for the specific condition that is present when gate boosting is used as a gate driving method. The effects of overvoltage are presented as well as calculation of the expected lifetime of a MOSFET when gate boosting is used.

Publication Details

Journal
Brno University of Technology Digital Library (Brno University of Technology)
Published
2025-01-01
Primary Topic
Particle Detector Development and Performance
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article
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article

Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs

Brno University of Technology Digital Library (Brno University of Technology)
Particle Detector Development and Performance
article

Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs

article en

Abstract

This paper presents a method of estimating gate oxide reliability and lifetime of commercially available MOSFETs. The estimation is calculated for the specific condition that is present when gate boosting is used as a gate driving method. The effects of overvoltage are presented as well as calculation of the expected lifetime of a MOSFET when gate boosting is used.

Brno University of Technology Digital Library (Brno University of Technology)
Affordable and clean energy
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Particle Detector Development and Performance
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Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs · Brno University of Technology Digital Library (Brno University of Technology) (2025) | TGRS Research Map | TGRS