Electrical properties of antiferroelectric Pb(Zr,Hf)O<sub>3</sub> films fabricated by chemical solution deposition

<jats:title>Abstract</jats:title>\n <jats:p>Pb(Zr<jats:sub>1−<jats:italic>x</jats:italic>\n </jats:sub>Hf<jats:sub>\n <jats:italic>x</jats:italic>\n </jats:sub>)O<jats:sub>3</jats:sub> (<jats:italic>x</jats:italic> = 0, 0.1, 0.2, 0.5, 1) films were fabricated on Pt/Ti/SiO<jats:sub>2</jats:sub>/Si substrates using a chemical solution deposition process in this study. The effect of the Zr/Hf ratio on energy-storage performance was evaluated based on the measurement of <jats:italic>P</jats:italic>–<jats:italic>E</jats:italic> hysteresis loops. It is shown that the maximum polarization and the recoverable energy density decrease with the increase of the Hf concentration. The energy efficiency of the Hf-contained films is close to each other but higher than the PbZrO<jats:sub>3</jats:sub> film. As a result, the Pb(Zr<jats:sub>0.9</jats:sub>Hf<jats:sub>0.1</jats:sub>)O<jats:sub>3</jats:sub> film achieved in this work exhibited the highest recoverable energy density of 11.3 J cm<jats:sup>−3</jats:sup> and a larger energy efficiency of 55% at 800 kV cm<jats:sup>−1</jats:sup>, exceeding those of either PbZrO<jats:sub>3</jats:sub> or PbHfO<jats:sub>3</jats:sub> single-component film. This enhancement was related with the size and homogeneity of the crystal grains.</jats:p>