Hidrostatik Basınç ve Sıcaklığın GaAs/Ga1-xAlxAs Küresel Kuantum Noktasındaki Yabancı Atom Self-Polarizasyonu ve Bağlanma Enerjisi Üzerindeki Etkileri

The effects of hydrostatic pressure and temperature on impurity self-polarization and binding energy in GaAs/Ga1-xAlxAs spherical quantum dot in 2p excited state were calculated by variational method under effective mass approach. Binding energy and impurity self-polarization were investigated as a function of temperature, hydrostatic pressure, impurity position and dot radius. The results show that impurity self-polarization and binding energy depend on hydrostatic pressure and temperature. In addition, binding energy increases with hydrostatic pressure and decreases with temperature, while impurity self-polarization decreases with hydrostatic pressure and increases with temperature. However, calculation of impurity self-polarization under the effect of temperature and hydrostatic pressure provides important information about the position of impurity in the system.