50 nm InP HEMTs with Tgates Fabricated by Single-Step Electron Beam Lithography for High-Frequency Applications

Publication Details

Journal
ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)
Published
2025-09-21
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
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article

50 nm InP HEMTs with Tgates Fabricated by Single-Step Electron Beam Lithography for High-Frequency Applications

ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)
Semiconductor Quantum Structures and Devices
article

50 nm InP HEMTs with Tgates Fabricated by Single-Step Electron Beam Lithography for High-Frequency Applications

article en

Abstract

No abstract available for this paper.
ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)
Affordable and clean energy
Openalex Percentile: Top 52%
Semiconductor Quantum Structures and Devices
Open Access PDFOpenAlex
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50 nm InP HEMTs with Tgates Fabricated by Single-Step Electron Beam Lithography for High-Frequency Applications · ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) (2025) | TGRS Research Map | TGRS