A Review on Triple-Gate Graphene Nanoribbon Tunnel FETs and Performance Analysis of GNRFETs for Low-Power Electronics

Graphene nanoribbons (GNRs), due to their tunable bandgaps, excellent carrier mobility, and compatibility with advanced device architectures, have emerged as strong candidates for next-generation nanoscale electronics. This review provides an in-depth analysis of triple-gate graphene nanoribbon tunnel field-effect transistors (TFETs) and GNR-based field-effect transistors (GNRFETs), focusing on their potential for ultra-low-power and high-frequency applications. The triple-gate GNR TFET demonstrates a subthreshold swing (SS) as low as 47 mV/dec at cryogenic temperatures, independent up to 40 K, with strong electrostatic control enabled by the gate configuration. Additionally, device performance is evaluated under various doping and dielectric conditions using the Non-Equilibrium Green’s Function (NEGF) approach. The review also covers fabrication techniques, simulation models, material synthesis methods, and the impact of quantum confinement and edge roughness on device behavior. The advantages and limitations of both MOS- and Schottky-barrier-type GNRFETs are compared. This comprehensive survey highlights the challenges and opportunities in adopting GNRFETs and GNR TFETs in future energy-efficient and high-performance nanoelectronic systems.