Op Weg naar Injectielasing: Fundamenten van Perovskiet Lichtgevende Componenten bij sterke Ladingsinjectie

Semiconductor lasers have transformed the technological landscape over the past few decades, forming the backbone of modern fiber optic communication systems. As photonic applications continue to evolve, photonic integrated circuits are set to drive the next wave of innovation across diverse fields such as biodiagnostics, LiDAR, quantum computing, and optical computing. While conventional III-V semiconductor lasers remain an important foundation of photonic technologies, their integration with mainstream platforms like silicon substrates presents significant challenges, forming a bottleneck for further technological advancements. Thin-film laser diodes, with their broad substrate compatibility and ease of integration, offer a scalable, cost-effective, and promising alternative with the potential to revolutionize multiple industries. In this thesis, I investigate the potential of metal halide perovskites as a gain medium for thin-film laser diodes. Perovskites have unique properties such as direct optical bandgap, high charge carrier mobility, wavelength tunability via chemical composition engineering, high optical gain values, low Auger recombination coefficients, and the feasibility of low temperature processing. These advantages position perovskites as strong candidates for next-generation optoelectronic devices such as solar cells, photodetectors, light-emitting diodes, and potentially laser diodes. However, perovskites also present challenges, including low operational stability, hysteresis, ion migration, and poor thermal conductivity, which hinder their adoption for laser diode applications. Realizing thin-film laser diodes based on perovskites involves several key challenges. First, achieving high internal quantum efficiency in perovskite light-emitting diode structures under extreme current densities requires addressing issues such as Joule heating, device degradation, ion migration, and efficiency roll-off. Second, optimizing the device stack to maximize optical gain while minimizing optical losses from transport layers and electrodes is essential. The balance between electrical and optical performance is fundamental to the successful development of perovskite laser diodes. This thesis seeks to address these challenges by optimizing the device stack for enhanced brightness and operational stability at higher current densities. Furthermore, the intriguing phenomenon of ion migration in perovskites is investigated and modeled, with a focus on its potential for improving device performance. In the next phase, I explore the use of sub-microsecond voltage pulses at low temperatures (down to 77 K) to electrically pulse perovskite devices. This approach enables high device efficiency and lowers the threshold for stimulated emission. Finally, I demonstrate a vertical, transparent light-emitting diode stack, achieving electrically assisted amplified spontaneous emission—a critical milestone toward the realization of perovskite-based laser diodes.