Green semiconductors: synthesis and analysis of indium sulfide thin films /

Thin films are essential in advancing modern technologies due to their wide range of applications in electronics, optoelectronics, and energy systems. Chemical synthesis methods—such as chemical bath deposition (CBD) and solvothermal processes—offer environmentally friendly, low-cost, and scalable alternatives to physical deposition techniques, aligning with current efforts toward greener materials processing [1][2]. Indium sulfide is a non-toxic, cadmium-free semiconductor with a suitable band gap (~2.0–2.3 eV) and high optical absorption, making it an environmentally responsible choice for replacing more hazardous compounds like CdS [3]. Its properties make it highly suitable for use in sustainable photovoltaic and photocatalytic systems [4]. The ecological and functional advantages of In₂S₃ have stimulated growing interest in its application as a buffer layer in thin-film solar cells, as well as in photodetectors and gas sensors [5][6]. The material’s performance is closely tied to the quality and morphology of the thin films, which can be fine-tuned through chemical synthesis routes [7]. In this work we have synthesized thin indium sulfide films by chemical bath deposition method. Structural and morphological analyses, including X-ray diffraction (XRD) and scanning electron microscopy (SEM), confirmed the successful formation of crystalline In₂S₃ thin films. This study demonstrates an environmentally friendly and cost-effective method for producing indium sulfide thin films. The results support the advancement of environmentally friendly materials for future optoelectronic and energy applications, providing a sustainable alternative to more harmful and resource-demanding materials.