Benchmarking the high conductive two-dimensional layered structured NbS2, ZrS2 , ReS2 and NbSe2 materials with zero energy bandgap (Eg) forphotocatalytic application: a DFT study

Two-dimensional materials are among the most scientifically accessible materials in material science at the beginning of the twenty-first century. There has been interest in the monolayer transition metal dichalcogenide (TMDC) family because of its large active site surface area for UV photons of light for wastewater treatment. In the present work, density functional theory (DFT) is utilized to model the optical, structural and electrical properties of TMDCs such as NbS2, ZrS2, ReS2 and NbSe2 using the GGA-PBE simulation approximation. Based on DFT calculations, it is determined that NbS2, ZrS2, ReS2 and NbSe2 have zero energy bandgap (Eg). The additional gamma-active states that are generated in NbS2, ZrS2, ReS2 and NbSe2 materials aid in the construction of the conduction and valence bands, resulting in a zero Eg. In the ultraviolet (UV) spectrum, the increase in optical conductance peaks from 4.5 to 15.7 suggests that the material exhibits stronger absorption or interaction with UV light due to the excitation of electronic transitions or inter-band transitions. The highest optical conductivity and absorbance of two-dimensional TMDCs NbS2, ZrS2, NbSe2 and ReS2 show 2.4 × 105 , 2.5 × 105 , 2.8 × 105 and 7 × 105 Ω −1 cm−1 , respectively. The TMDC family, including two-dimensional TMDCs NbS2, ZrS2, NbSe2 and ReS2, is known for its unique electronic and optical properties. Their layered structure and high surface area make them excellent candidates for applications involving light absorption and photodetection. These materials reduce photon recombination and improve charge transport, making them suitable for photocatalytic and photoanode applications.