General Phase Segregation and Phase Pinning Effects in Ln-doped Lead Halide Perovskite with Dual-wavelength Lasing

Lead halide perovskites (LHPs) exhibit outstanding optoelectronic properties, making them highly promising for applications in various optoelectronics devices. However, rapid ion migration in LHPs not only undermines device stability but also hinders the development of multi-band composite structures, which are crucial to advancing perovskite bandgap engineering and unlocking novel applications. Here, we introduce a novel and general strategy involving both phase segregation and phase pinning by doping Er$^{3+}$ into CsPb(X$_x$Y$_{1-x}$)$_3$ (X, Y = Cl, Br, I) microplates via a simple one-step chemical vapor deposition method. The ion migration is effectively suppressed and a variety of stable multi-band composite structures are demonstrated, with diverse dual-band photoluminescence emissions covering the red, green, and blue spectral bands. The corresponding high-performance dual-wavelength lasers have also been fabricated, confirming the stability and high crystalline quality of these multi-band composite structures. In addition, this strategy is extended to the doping of various lanthanide ion and the incorporation of different mixed halides into LHPs. As a result, a series of multi-band composite structures based on LHPs and corresponding dual-wavelength lasers are developed, thereby validating the generality of this strategy. Theoretical calculations clarify the phase segregation and phase pinning mechanism in these LHPs. Our work not only facilitates the stability design of LHPs but also significantly advances the bandgap engineering, thereby contributing to the expansion of their potential applications in the optoelectronic future.