Strain and doping transfer between suspended and supported bilayer graphene

Due to their unique dimensionality, the physical properties of two-dimensional materials are deeply impacted by their surroundings, calling for a thorough understanding and control of these effects. We investigated the influence of the substrate and the pressure transmitting medium on bilayer graphene in a unique high-pressure environment where the sample is partially suspended and partially supported. By employing Raman spectroscopy with a sub-micron spatial resolution, we explored the evolution of strain and doping, and demonstrated that they are both similarly induced in the suspended and supported regions of the bilayer graphene within the studied pressure range. Almost full strain and doping transfer between the supported and suspended regions is concluded. We observed that charge carrier density saturates quickly at low pressures (2 GPa) while biaxial strain continuously increases with pressure. Additionally, Raman spatial mapping highlights a rather uniform doping and strain distribution, yet with significant local variations revealing a more complex scenario than previously documented by single-point studies at high pressure.

Publication Details

Journal
ArXiv.org
Published
2025-03-10
Primary Topic
Graphene research and applications
Type
article
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article

Strain and doping transfer between suspended and supported bilayer graphene

ArXiv.org
Graphene research and applications
article

Strain and doping transfer between suspended and supported bilayer graphene

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Abstract

Due to their unique dimensionality, the physical properties of two-dimensional materials are deeply impacted by their surroundings, calling for a thorough understanding and control of these effects. We investigated the influence of the substrate and the pressure transmitting medium on bilayer graphene in a unique high-pressure environment where the sample is partially suspended and partially supported. By employing Raman spectroscopy with a sub-micron spatial resolution, we explored the evolution of strain and doping, and demonstrated that they are both similarly induced in the suspended and supported regions of the bilayer graphene within the studied pressure range. Almost full strain and doping transfer between the supported and suspended regions is concluded. We observed that charge carrier density saturates quickly at low pressures (2 GPa) while biaxial strain continuously increases with pressure. Additionally, Raman spatial mapping highlights a rather uniform doping and strain distribution, yet with significant local variations revealing a more complex scenario than previously documented by single-point studies at high pressure.

ArXiv.org
Openalex Percentile: Top 60%
Graphene research and applications
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