Structural Characterisation of Grown InSe:Mn Semiconductors and Effect of Doped Manganese

Scientific studies on binary semiconductors have been going on for half a century. The growth and research of semiconductors have contributed greatly to the advancement of semiconductor technology. Indium and selenium were synthesized from elements in stoichiometric ratios and doped with manganese. InSe and InSe:Mn single crystals were successfully grown by the Bridgman/Stockbarger crystal growth method. Since the surfaces of the grown samples do not contain contamination, chemical contamination was not caused by chemical treatment. Since the grown semiconductors have a layered structure, the samples were easily prepared for characteristic analyses along the 001 planes. The structure of the InSe and InSe:Mn semiconductors was analysed using x-ray diffractometers and energy dispersive X-ray techniques. An important study has been carried out on the structural properties of the grown InSe and InSe:Mn semiconductors. The hexagonal structure of the InSe semiconductor with lattice parameters a = b = 4.025 Å and c = 16.732 Å was confirmed with the help of X-ray diffraction. III-VI semiconductors are used in visible and infrared light-emitting diodes, infrared detectors, converters, amplifiers, optical parameter oscillators, and far infrared generator.