Micro-transfer printing of O-band InP-InGaAs photodiodes on a silicon nitride photonic platform

For integrated photonic applications that use visible and near-infrared light, silicon nitride is the perfect material. It combines transparency for visible and near-infrared wavelengths, compatibility with CMOS technology, watt-range power handling, low-temperature sensitivity, etc. A growing number of photonic integrated circuit (PIC) applications can benefit from this platform, including communication, quantum applications, high-performance light sources, bio-photonics, optical beamforming, and gas sensing. However, this platform is intrinsically passive and requires heterogeneous integration techniques to introduce active components to enable the aforementioned applications. In this poster, we present the heterogeneous integration of O-band InP-InGaAs photodiodes on a silicon nitride photonic platform using micro-transfer printing technology. The devices exhibit a responsivity of 0.9 A/W at 1310 nm with an applied bias voltage of -3 V, and a 30 GHz 3-dB bandwidth.